SOLID STATE AND MATERIALS SCIENCE

 

 Comment on Low-temperature growth on high-miscut Si(111) mediated by thin overlayers of Pb, P.G. Evans, O.D. Dubon, J.F. Chervinsky, J.A. Golovchenko and F. Spaepen, Appl. Phys. Lett. 75, 2954 (1999).

 

Doping by metal-mediated epitaxy:  growth of As delta-doped Si through a Pb monolayer, O.D. Dubon, P.G. Evans, M.F. Chisholm, D.A. Muller, J.F. Chervinsky, M.J. Aziz, F. Spaepen, and J.A. Golovchenko, Applied Phys.  Letters,  78  (11), 1505, (12 March 2001).

 

 Low-temperature homoepitaxial growth on Si(111) through a Pb monolayer, P.G. Evans, O.D. Dubon, J.F. Chervinsky, J.A. Golovchenko and F. Spaepen, Applied Physics Letters, 73 3120-3122 (23 November 1998).

 

Effect of substrate miscut on low-temperature homoepitaxial growth on Si (111) mediated by overlayers of Au:  evidence of step flow, G.D. Wilk, J.F. Chervinsky, F. Spaepen, J.A. Golovchenko, App. Phys. Lett. 70 (19) 2553-2555, (12 May 1997).

 

Absence of discontinuities in ion channeling parameters for thin films, N.E. Hecker, R. Haakenaasen, J.A. Golovchenko, J.F. Chervinsky, and C.B. Eom, Phys. Rev. B Rapid Comm. 55 , R700-R703, (1 January 1997-II).

 

On the role of classical and quantum notions in channeling of fast positrons as a solid state probe of valence and spin densities.  L.V. Hau, J.A. Golovchenko, R. Haakenaasen, A.W. Hunt, J.P. Peng, P. Asoka-Kumar, K.G. Lynn, M. Weinert, J.C. Palathingal, Nuclear Instruments and Methods B, 119, 1,2, 30-41, (1996).

 

High-Resolution Structural Study of Bi on Si(001), G.E. Franklin, S. Tang, J.C. Woicik, M. Bedzyk, A.J. Freeman and J.A. Golovchenko,  Phys. Rev. B Rapid Communication 52 (8), R5515-R5518 (15 August 1995-II).

 

Three-stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy, S.K. Theiss, D.M. Chen, and J.A. Golovchenko, Appl. Phys. Lett. 66 (4) 448-450 (23 January 1995).

 

Measurement of Lattice Relaxation During Epitaxy Using Tunneling Microscopy:  Ge on Si(111), S.K. Theiss, D.M. Chen, and J.A. Golovchenko, Mat. Res. Soc. Symp. Proc. 317 15-20 (1994).

 

Low-temperature homoepitaxial growth of Si(111) mediated by thin overlayers of Au, G.D. Wilk, R.E. Martinez, J.F. Chervinsky, F. Spaepen, and J.A. Golovchenko, Appl. Phys. Lett. 65  (7) 866-868 (15 August 1994).

 

Absence of Anomalous Copper Vibrations in Yba2Cu3O7  N.E. Hecker, H.A. Mook, J.A. Harvey, N.W. Hill, M.C. Moxon, and J.A. Golovchenko, Phys Rev. B. Condensed Matter 16129-16132 50 (21) (1 December 1994-I).

 

Absence of Discontinuities  in Ion Channeling Paramaters for Yba2Cu3O7 , N.E. Hecker, R. Haakenaasen, J.A. Golovchenko, and J.F. Chervinsky, Phys. Rev. B  55 (2) R700-R703 (Jan. 1997).

 

High Quality Crystalline YBa2Cu3O7- dFilms on Thin Silicon Substrates, R. Haakenaasen, D.K. Fork, and J.A. Golovchenko, Appl. Phys. Lett. 64 , (12) 1573-1575 (March 1994).

 

Surface Stresses in Atomic Reconstructions of Lead on Silicon (111), K. Rao, R.E. Martinez, and J.A. Golovchenko, Surface Science 277, 323‑329 (1992).

Homoepitaxial Growth of Crystalline Ge Films through a Liquid Metal Medium at Low Temperature, F. Xiong, J.A. Golovchenko, and F. Spaepen, Mat. Res. Soc. Symp. Proc.  204  265‑270 (1991).

 

Growth and Morphology of PB on Si(111), E. Ganz, I.S. Hwang, F. Xiong, S. Leonard, and J. Golovchenko, Surface Science 257, 259-273 (1991).

 

Liquid-Metal-Mediated Homoepitaxial Film Growth of Ge at Low Temperature, F. Xiong, E. Ganz, A. Loeser, J. Golovchenko, and F. Spaepen, App. Phys. Lett. 59, 3586-3588 (1991).

 

In Situ RBS and Channeling Study of Molecular Beam Epitaxial Growth of Metals and Semiconductors on Semiconductors, F. Xiong, E. Ganz, J.A. Golovchenko, and F. Spaepen, Nuclear Instruments and Methods in Physics Research B 56/57, 780-784 (1991).

Direct Measurement of Crystal Surface Stress, R.E. Martinez, W.M. Augustyniak, and J.A. Golovchenko, Phys. Rev. Lett. 64, 1035-1038 (1990).

 

Dynamics of Laser-Annealing, D.H. Auston, J.A. Golovchenko, and T.N.C. Venkatesan, Proc. at Society of Photo-Optical Instrumentation Engineers, 1979.

 

Calculation of the Dynamics of Surface Melting during Laser Annealing, C.M. Surko, A.L. Simons, D.H. Auston, J.A. Golovchenko, R.E. Slusher, and T.N.C. Venkatesan, Appl. Phys. Lett. 34, (10) 635-637 (1979).

 

Dual-Wavelength Laser Annealing, D.H. Auston, J.A. Golovchenko, and T.N.C. Venkatesan, Appl. Phys. Lett. 34 (9) 558-560 (1 May 1979).

 

Study of Surface Crystallinity and Stoichiometry of Laser-Annealed GaAs Using Time Resolved Reflectivity and Channeling, T.N.C. Venkatesan, D.H. Auston, J.A. Golovchenko, and C.M. Surko, in Laser-Solid Interactions and  Laser Processing - ed. S. D. Ferris pp. 629-  633 ( 1978)

 

Calculation of the Dynamics of Surface Melting During Laser Annealing, C.M. Surko, A.L. Simons, D.H. Auston, J.A. Golovchenko R. E. Slusher and T.N.C. Venkatesan, Appl. Phys. Lett. 34 (10) 635-637 (15 May 1979).

 

Dynamics of Laser Annealing, D.H. Auston, J.A. Golovchenko et al., in Laser-Solid Interactions and  Laser Processing - ed. S. D. Ferris pp. 11-26, (1978) .

 

Study of Surface Crystallinity and Stoichiometry of Laser-Annealed GaAs using Time-Resolved Reflectivity and Channeling, T.N.C. Venkatesan, D.H. Auston, J.A. Golovchenko, and C.M. Surko, Appl. Phys. Lett. 35 (1), 88-90 (1 July 1979).

 

Melting Phenomenon during Pulsed Laser Annealing in Silicon, P.M. Petroff, D.H. Auston, J.R. Patel, P.R. Smith, A. Savage, J.A. Golovchenko, J. Electr. Mat. 8, 729 (1979).

 

Dynamics of Q- Switched Laser Annealing, D.H. Auston, J.A. Golovchenko, A.L. Simons, C.M. Surko, and T.N.C. Venkatesan, Appl. Phys. Lett. 34, 777-779 (1979).

 

C.W. Argon Laser Annealing of Ion Implanted Silicon, D.H. Auston, J.A. Golovchenko, P.R. Smith, C.M. Surko, and T.N.C. Venkatesan, Appl. Phys. Lett. 34, (11) 777-779 (1 June 1979).