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 Jene A. Golovchenko

Publication List

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  1. Fleming, S.J., B. Lu, and J.A. Golovchenko. 2017. Charge, diffusion, and current fluctuations of single-stranded DNA trapped in an MspA nanopore. Biophysical Journal 112: 368-375.  
  2. Rollings, R.C., A.T. Kuan, and J.A. Golovchenko. 2016. Ion selectivity of graphene nanopores. Nature Communications 7: 11408.
  3. Levine, E.V., M.M. Burns, and J.A. Golovchenko. 2016. Nanoscale dynamics of Joule heating and bubble nucleation in a solid-state nanopore. Physical Review E 93: 013124.
  4. T. Szalay and J.A. Golovchenko. 2015. De novo sequencing and variant calling with nanopores using PoreSeq. Nature Biotechnology 33: 1087-1091. http://dx.doi.org/10.1038/nbt.3360
  5. Lu, B, S. Fleming, T. Szalay, and J. Golovchenko. 2015. Thermal motion of DNA in an MspA pore. Biophysical Journal 109: 1439-1445.     http://dx.doi.org/10.1016/j.bpj.2015.08.019.
  6. Kuan, A.T., B. Lu, P. Xie, T. Szalay, and J.A. Golovchenko. 2015. Electrical pulse fabrication of graphene nanopores in electrolyte solution. Applied Physics Letters 106: 203109.
  7. Hoogerheide, D.P., B. Lu, and J.A. Golovchenko. 2014. Pressure-voltage trap for DNA near a solid-state nanopore. ACS Nano 8: 7384-7391.
  8. Nagashima, G., E.V. Levine, D.P. Hoogerheide, M.M. Burns, and J.A. Golovchenko. 2014. Superheating and homogeneous single bubble nucleation in a solid-state nanopore. Physical Review Letters 113: 024506. Click here for the online abstract.
  9. Hoogerheide, D.P., F. Albertorio, and J.A. Golovchenko. 2013. Escape of DNA from a weakly biased thin nanopore: Experimental evidence for a universal diffusive behavior. Physical Review Letters 111: 248301. Click here for the online abstract.
  10. Garaj, S., S. Liu, J.A. Golovchenko, and D. Branton. 2013. Molecule-hugging graphene nanopores. Proc. Natl. Acad. Sci. USA 110: 12192-12196. Click here for online article.
  11. Lu, B., D.P. Hoogerheide, Q. Zhao, H. Zhang, Z. Tang, D. Yu, and J.A. Golovchenko. 2013. Pressure-controlled motion of single polymers through solid-state nanopores. Nano Letters 13: 3048-3052. Click here for online access.
  12. Vlassarev, D.M. and J.A. Golovchenko. 2012. Trapping DNA near a solid-state nanopore. Biophysical Journal 103: 352-356.
  13. Kuan, A.T. and J.A. Golovchenko. 2012. Nanometer-thin solid-state nanopores by cold ion beam sculpting. Applied Physics Letters 100: 213104.   Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. Click here for online version of abstract.
  14. Russo, C.J. and J.A. Golovchenko. 2012. Atom-by-atom nucleation and growth of graphene nanopores. Proc. Natl. Acad. Sci. U.S.A. 109: 5953-5957. Click here for the article in PNAS online.
  15. Gardener, J.A. and J.A. Golovchenko. 2012. Ice-assisted electron beam lithography of graphene. Nanotechnology 23: 185302.   This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher-authenticated version is available online here. Click here for online version of abstract.
  16. Cheang-Wong, J.-C., K. Narumi, G.M. Schürmann, M.J. Aziz, and J.A. Golovchenko. 2012. Tunable nanometer electrode gaps by MeV ion irradiation. Applied Physics Letters 100: 153108.   Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. Click here for online version of abstract.
  17. Han, A., A. Kuan, J.A. Golovchenko, and D. Branton. 2012. Nanopatterning on nonplanar and fragile substrates with ice resists. Nano Letters 12: 1018-1021.   Click here for preprint.     Click here for link to Nano Letters login to access article.
  18. Sadki, E.S., S. Garaj, D. Vlassarev, J.A. Golovchenko, and D. Branton. 2011. Embedding a carbon nanotube across the diameter of a solid state nanopore. Journal of Vacuum Science and Technology B 29: 053001-1 - 053001-4. Copyright 2011 American Institute of Physics.
  19. Lu, B., F. Albertorio, D.P. Hoogerheide, and J.A. Golovchenko. 2011. Origins and consequences of velocity fluctuations during DNA passage through a nanopore. Biophysical Journal 101: 70-79.   
  20. Han, A., J. Chervinsky, D. Branton, and J.A. Golovchenko. 2011. An ice lithography instrument. Review of Scientific Instruments 82: 065110-1 - 065110-6.    Click here for preprint.     Click here for link to Review of Scientific Instruments to see abstract and to login to access full article.
  21. Hoogerheide, D.P., H. B. George, J.A. Golovchenko, and M.J. Aziz. 2011. Thermal activation and saturation of ion beam sculpting. Journal of Applied Physics 109: 074312-1 - 074312-4.   Click here for preprint.     Click here for link to Journal of Applied Physics login to access article.
  22. Garaj, S., W. Hubbard, and J.A. Golovchenko. Graphene synthesis by ion implantation. Applied Physics Letters 97: 183103-1 - 183103-3 (2010).  
  23. Han, A., D. Vlassarev, J. Wang, J.A. Golovchenko, and D. Branton. Ice lithography for nanodevices. Nano Letters 10: 5056-5059 (2010).   
  24. Garaj, S., W. Hubbard, A. Reina, J. Kong, D. Branton, and J.A. Golovchenko. Graphene as a subnanometre trans-electrode membrane. Nature 467: 190-193 (2010). Cover story.

    Garaj et al.
    Click on the cover image, above, for a link to the journal article.


  25. Nanopore fabrication in amorphous Si: Viscous flow model and comparison to experiment, H.B. George, Y. Tang, X. Chen, J. Li, J.W. Hutchinson, J.A. Golovchenko, M.J. Aziz, Journal of Applied Physics 108, 014310 (2010).
  26. Ion-sculpting of nanopores in amorphous metals, semiconductors, and insulators, H.B. George, D.P. Hoogerheide, C.S. Madi, D.C. Bell, J.A. Golovchenko, M.J. Aziz, Applied Physics Letters 96, 263111 (2010).
  27. Field ionization of cold atoms near the wall of a single carbon nanotube, A. Goodsell, T. Ristroph, J.A. Golovchenko, L.V. Hau, Physical Review Letters 104, 133002 (2010).
  28. Base dependent DNA-carbon nanotube interactions: activation enthalpies and assembly-disassembly control, F. Albertorio, M.E. Hughes, J.A. Golovchenko, D. Branton, Nanotechnology 20, 395101 (2009).
  29. Probing surface charge fluctuations with solid-state nanopores, D.P. Hoogerheide, S. Garaj, J.A. Golovchenko, Physical Review Letters, 102, 256804 (2009).
  30. Recapturing and trapping single molecules with a solid-state nanopore, M. Gershow, J.A. Golovchenko Nature Nanotechnology, 2, 775-779 (December 2, 2007).
  31. Dynamics of ion beam stimulated surface mass transport to nanopores, D. P. Hoogerheide, J.A. Golovchenko, Materials Research Society Symposium Proceedings, 1020, GG02-01 (2007).
  32. Optical absorption of DNA-carbon nanotube structures, M.E. Hughes, E. Brandin, J. A. Golovchenko, Nano Letters, 7, 1191 (May 9, 2007).
  33. Room-temperature single-charge sensitivity in carbon nanotube field-effect transistors, H.B. Peng, M.E. Hughes, J.A. Golovchenko, Applied Physics Letters, 89, 243502 (December 2006).
  34. Nanopore sculpting with noble gas ions, Q. Cai, B. Ledden, E. Krueger, J.A. Golovchenko, J. Li, Journal of Applied Physics 100, 024914 (2006).
  35. Nanoscale volcanoes: Accretion of matter at ion sculpted nanopores, T. Mitsui, D. Stein, Y.R. Kim, D. Hoogerheide, J.A. Golovchenko Physical Review Letters, 96,3,036102 (January 2006).
  36. Probing nanotube-nanopore interactions, G.M.  King, J.A. Golovchenko,  Physical Review Letters, 95, 216103 (November 18, 2005).
  37. Detecting single stranded DNA with a solid state nanopore, D. Fologea, M. Gershow, B. Ledden, D. McNabb, J.A. Golovchenko, J. Li Nano Letters, 005, 1905-1909 (October 2005).
  38. Nanometer patterning with ice, G.M. King, G. Schurmann, D. Branton, J.A. Golovchenko, Nano Letters, 5, 1157-1160 (April 2005).
  39. Detection and quantized conductance of neutral atoms near a charged carbon nanotube, T. Ristroph, A. Goodsell, L. Hau and J.A. Golovchenko, Physical Review Letters, 94, 066102 (2005).
  40. Atomic layer deposition to fine-tune the surface properties and diameters of fabricated nanopores, P. Chen, T. Mitsui, D.B. Farmer, J. Golovchenko, R.G. Gordon, D. Branton, Nano Letters, 4, 1333-1337 (2004).
  41. Coulomb blockade in suspended SiN4-coated single-walled carbon nanotubes, H.B. Peng, and Jene A. Golovchenko, Applied Physics Letters, 84, 5428-5430 (2004).
  42. Feedback-controlled ion beam sculpting apparatus, Derek M. Stein, Ciaran J. McMullan, Jiali Li, and Jene A. Golovchenko, Review of Scientific Instruments, 75, 900-905 (2004).
  43. DNA molecules and configurations in a solid-state nanopore microscope, J. Li, M. Gershow, D.  Stein, E. Brandin, J. A. Golovchenko, Nature Materials, 2, 611-615 (2003).
  44. Patterned growth of single-walled carbon nanotube arrays from a vapor-deposited Fe catalyst, H.B. Peng, T.G. Ristroph, G.M. Schurmann, G.M. King, J. Yoon, V. Narayanamurti, J. A. Golovchenko, Applied Physics Letters, 83, 4238 (2003).
  45. Ion beam sculpting timescales, D. M. Stein, J. Li, J. A. Golovchenko, Physical Review Letters, 89, :276106-1 (2002).
  46. Ion-beam sculpting at nanometre length scales, J. Li, D. Stein, C. McMullan, D. Branton, M.J. Aziz and J.A. Golovchenko, Nature, 412, 166-169 (12 July, 2001).
  47. Confinement-enhanced electron transport across a metal-semiconductor interface, I.B. Altfeder. J.A. Golovchenko, and V. Narayanamurti, Physical Review Letters, 87(5), (30 July 2001).
  48. Doppler broadening of in-flight positron annihilation radiation due to electron momentum, A.W. Hunt, D.B. Cassidy, P.A. Sterne, T.E. Cowan, R.H. Howell, K.G. Lynn, and J.A. Golovchenko, Physical Review Letters, 86 (24), 5612-5615 (11 June 2001).
  49. Growth and evaporation of Pb layers on As-terminated Si (111) by P.G. Evans, O.D. Dubon, J.F. Chervinsky, M.J. Aziz, F. Spaepen and J.A. Golovchenko, Applied Physics Letters, (in press.)
  50. The Bose-Einstein condensation of positronium in submicron cavities”, J.A. Golovchenko and D. Cassidy  "New directions in antimatter chemistry and physics", C.M. Surko and F. A. Gianturco, eds., Kluwer Academic Publishers, The Netherlands, (2001).  
  51. Doping by metal-mediated epitaxy:  Growth of As delta-doped Si through a Pb monolayer, O.D. Dubon, P.G. Evans, M.F. Chisholm, D.A. Muller, J.F. Chervinsky, M.J. Aziz, F. Spaepen, and J.A. Golovchenko, Applied Phys.  Letters, 78 (11), 1505, (12 March 2001).
  52. Resonant vs. non-resonant nuclear excitation of 115In  by positron annihilation, D.B. Cassidy, A.W. Hunt, T.E. Cowan, A.P. Mills, Jr., R.H. Howell, P. Ashoka-Kumar, K.G. Lynn, J.C. Palathingal and J.A. Golovchenko, Phys. Rev C, 64, 054603 (2001).
  53. Light emission from Er at the As-terminated Si (111) Surface, P.G. Evans and J.A. Golovchenko,  Applied Phys. Lett.,  77 (14), (October 2, 2000).
  54. Rapid nanopore discrimination between single oligonucleotide molecules, A. Meller, L. Nivon, E. Brandin, J. Golovchenko, and D. Branton, The Proceedings of the National Academy of Science, 97, 1079-1084 (1 February 2000).
  55. Improved source and transport of monoenergetic MeV positrons, F.A. Selim, A.W. Hunt, J.A. Golovchenko, R.H. Howell, R. Haakenaasen, and K.G. Lynn, NIMB, 171, 182-188 (2000).
  56. In-flight annihilation during positron channeling, A.W. Hunt, D.B. Cassidy, F.A. Selim, R. Haakenaasen, T.E. Cowan, R.H. Howell, K.G. Lynn, and J. A. Golovchenko, Nuclear Instruments and Methods, 164-165, 44-52 (April 2000).
  57. Multiple scattering measurements of energetic positrons in a thin gold polycrystal, F.A. Selim, A.W. Hunt, R. Howell, K.G. Lynn and J.A. Golovchenko,  Nuclear Instruments  and Methods in Physics  B, 168 (1), 1-10 (May  2000).
  58. X-rays in curved spaces, x-ray and inner-shell processes, AIP Conference Proceedings #506, edited by R. W. Dunford, D. S. Gemmell, E. P. Kanter, B. Kraessig, S. H. Southworth, and L. Young, American Institute of Physics, 621-637 (2000).
  59. Comment on low-temperature growth on high-miscut Si(111) mediated by thin overlayers of Pb, P.G. Evans, O.D. Dubon, J.F. Chervinsky, J.A. Golovchenko and F. Spaepen, Appl. Phys. Lett., 77, 2616 (1999).
  60. Energy-resolved positron annihilation in flight in solid targets, M.H. Weber, A.W. Hunt, J.A. Golovchenko, K.G. Lynn, Phys. Rev. Lett., 83, 4658 (1999).
  61. Spatial sampling of crystal electrons by in-flight annihilation of fast positrons, A.W. Hunt, D.B. Cassidy, F.A. Selim, R. Haakenaasen, T.E. Cowan, R.H. Howell, K.G. Lynn, J.A. Golovchenko, Nature, 402, 157-160 (November 1999).
  62. Adapting to nanoscale events, D. Branton and J.A. Golovchenko, Nature, 398, 660-661 (22 April 1999).          
  63. In flight positron annihilation in thin targets A. W. Hunt, M. H. Weber, J. A. Golovchenko and K. G. Lynn, Applied Surface Science, 149, 282 (1999).
  64. Deflection and diffraction of x-rays bound to curved surfaces, C. Liu and J.A. Golovchenko, Optics Letters, 587-589 24 (9), (May 1999).
  65. Low-temperature homoepitaxial growth on Si(111) through a Pb monolayer, P.G. Evans, O.D. Dubon, J.F. Chervinsky, J.A. Golovchenko and F. Spaepen, Applied Physics Letters, 73, 3120-3122 (23 November 1998).
  66. Near resonant spatial images of confined Bose-Einstein condensates in the '4 Dee' magnetic bottle,  Lene Vestergaard Hau, B.D. Busch, Chien Liu, Zachary Dutton, Michael M. Burns, and J.A. Golovchenko,  Phys. Rev. A, Atomic, Molecular and Optical Physics,  58 (1), R54-57  (July 1998).
  67. Cold atoms and creation of new states of matter: Bose-Einstein condensates, Kapitza states, and '2D magnetic hydrogen atoms' in Photonic, Electronic, and Atomic Collisions,  Lene Vestergaard Hau, B. D. Busch, Chien Liu, Michael M. Burns, and J. A. Golovchenko (Invited Papers of the Twentieth International Conference on the Physics of Electronic andAtomic collisions, Vienna, Austria, (23- 29 July, 1997), edited by Friedrich Aumayr and Hannspeter Winter, 41-50, (World Scientific Publishing Company, Singapore, 1998).
  68. Single-quantum annihilation and two-quantum annihilation in-flight measurements of electron distributions using channeled positrons,  R. Haakenaasen, A.W. Hunt, J.A. Golovchenko, R.H. Howell, F.A.Selim, K.G. Lynn, T.E. Cowan, and Lene Vestergaard Hau,  Materials  Science Forum, 255-257,  263 (1997).
  69. Spin precession for channeled positrons and electrons, A.W. Hunt, Lene Vestergaard Hau, and J.A. Golovchenko, Materials Science Forum, 255-257,  263 (1997).
  70. Progress towards measuring atomic scale magnetism with fast channeled positrons, L.V. Hau, A.W. Hunt,  J.A. Golovchenko , R. Haakenaasen, K.G. Lynn, Materials Science Forum 255-257 pp. 119-123, Trans Tech Publications, Vetilcon-Zuerich Switzerland<, 1997.  Eds. Jean, Y.C. Eldrup, M., Schrader, D.M. & West, R.N.   Presented at the 11th International Conference on Positron Annihilation (ICPA-11 Program) in Kansas City, M.O, (May 25-30, 1997).
  71. Calculations of multiple scattering for fast positrons and electrons, F.A. Selim, J.A. Golovchenko, M. A. Mandour, R. Howell and M.S.Al Elwafa, Materials Science Forum 255-257 pp. 257-259, Trans Tech Publications, Vetilcon-Zuerich Switzerland, 1997.  Eds. Jean, Y.C. Eldrup, M., Schrader, D.M. & West, R.N.   Presented at the 11th International Conference on Positron Annihilation (ICPA-11 Program) in Kansas City, MO, (May 25-30, 1997).
  72. Surface trapped x-rays:  Whispering-gallery modes at  = 0.7 Å, C. Liu and J. A. Golovchenko, Phys. Rev. Lett., 79 (5) 788 (4 August 1997).
  73. Effect of substrate miscut on low-temperature homoepitaxial growth on Si (111) mediated by overlayers of Au:  evidence of step flow, G.D. Wilk, J.F. Chervinsky, F. Spaepen, J.A. Golovchenko, App. Phys. Lett., 70 (19) 2553-2555 (12 May 1997).
  74. Absence of discontinuities in ion channeling parameters for thin films, N.E. Hecker, R. Haakenaasen, J.A. Golovchenko, J.F. Chervinsky, and C.B. Eom, Phys. Rev. B Rapid Comm., 55, R700-R703 (1 January 1997-II).
  75. On the role of classical and quantum notions in channeling of fast positrons as a solid state probe of valence and spin densities.  L.V. Hau, J.A. Golovchenko, R. Haakenaasen, A.W. Hunt, J.P. Peng, P. Asoka-Kumar, K.G. Lynn, M. Weinert, J.C. Palathingal, Nuclear Instruments and Methods B, 119, (1,2), 30-41 (1996).
  76. Waveguide for cold atoms:  Spin-1 magnetic particles and a filamentary current, K.Berg-Sorensen, M.M. Burns, J.A. Golovchenko, and L.V. Hau, Phys. Rev., A 53 (3), 1653‑1667 (March 1996).
  77. Writing diffractive structures by optical trapping, J-M R. Fournier, M. M. Burns and J. A. Golovchenko, Proceedings SPIE — The International Society for Optical Engineering, 2406, 101-111 (6-8 February 1995).
  78. Quantum channeling effects for 1 MeV positrons, R. Haakenaasen, L. V. Hau, J. A. Golovchenko, J.C. Palathingal, J.P. Peng, P. Asoka-Kumar, and K. G. Lynn, Phys. Rev. Lett., 75 , 8 1650-1653 (August 21, 1995).
  79. High-resolution structural study of Bi on Si(001), G.E. Franklin, S. Tang, J.C. Woicik, M. Bedzyk, A.J. Freeman and J.A. Golovchenko,  Phys. Rev. B Rapid Communication, 52 (8), R5515-R5518 (15 August 1995-II).
  80. Three-stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy, S.K. Theiss, D.M. Chen, and J.A. Golovchenko, Appl. Phys. Lett., 66 (4) 448-450 (23 January 1995).
  81. Supersymmetry and the binding of a magnetic atom to a filamentary current, L. V. Hau, J.A. Golovchenko, and M. M. Burns, Phys. Rev. Lett., 74, 3138-3140 (17 April 1995).
  82. Order-to-disorder phase transition study of Pb on Ge(111), G.E. Franklin, M.J. Bedzyk, J.C. Woicik, C. Liu, J.R. Patel and J.A. Golovchenko, Phys. Rev., B 51 (4), 2440-2445 (15 Jan. 1995-II).
  83. Structural determination of the Si(111) Ö 3x Ö3 -Bi surface by x-ray standing waves and scanning tunneling microscopy, J.C. Woicik, G.E. Franklin, C.Liu, R.E. Martinez, I.-S. Hwang, M.J. Bedzyk, J.R. Patel, and J.A. Golovchenko, Phys. Rev., B 50, 12246-12249 (15 Oct. 1994).
  84. High coverage phases in Pb/Si(111):  structures and phase transitions, I.-S. Hwang, R.E. Martinez, C. Liu, and J.A. Golovchenko, Surface Science, 323, 241-257 (1 Sept. 1994).
  85. Measurement of lattice relaxation during epitaxy using tunneling microscopy:  Ge on Si(111), S.K. Theiss, D.M. Chen, and J.A. Golovchenko, Mat. Res. Soc. Symp. Proc., 317, 15-20 (1994).
  86. Low-temperature homoepitaxial growth of Si(111) mediated by thin overlayers of Au, G.D. Wilk, R.E. Martinez, J.F. Chervinsky, F. Spaepen, and J.A. Golovchenko, Appl. Phys. Lett., 65 (7), 866-868 (15 August 1994).
  87. A new atomic beam source:  The "Candlestick", L.V. Hau, J.A. Golovchenko, and M.M. Burns, Review of Scientific Instruments, 65 (12), 3746-3750 (December 1994).
  88. Absence of anomalous copper vibrations in N.E. Hecker, H.A. Mook, J.A. Harvey, N.W. Hill, M.C. Moxon, and J.A. Golovchenko, Phys Rev. B. Condensed Matter, 50 (21), 16129-16132  (1 December 1994-I).
  89. Soft incommensurate reconstruction on Pb/Si(111):   Structure, stress, modulation and phase transition, I.-S. Hwang, R.E. Martinez, C. Liu, and J.A. Golovchenko, Phys. Rev. B, 51 (15), 193-196 (15 April 1995-I).
  90. Thermal vibration amplitudes and structure of As on Si(001), G.E. Franklin, E. Fontes, Y. Qian, M.J. Bedzyk, J.A. Golovchenko, and J.R. Patel, Phys. Rev. B, 50  (11), 7483-7487 (15 September 1994).
  91. Absence of discontinuities  in ion channeling paramaters for  , N.E. Hecker, R. Haakenaasen, J.A. Golovchenko, and J.F. Chervinsky, Phys. Rev. B,  55 (2), R700-R703  (Jan. 1997).
  92. Phase transition of monolayer Pb/Ge(111), Ing-Shouh Hwang and J.A. Golovchenko, Phys. Rev. B, 50 (24), 535-542 (15 December 1994).
  93. Mobile point defects and the atomic basis for structural transformations of a crystal surface, Ing-Shouh Hwang, Silva K. Theiss, and J.A. Golovchenko, Science, 265 , 490-496 (22 July 1994).
  94. High quality crystalline YBa 2 Cu 3 O 7- d Films on thin silicon substrates, R. Haakenaasen, D.K. Fork, and J.A. Golovchenko, Appl. Phys. Lett., 64 (12), 1573-1575 (March 1994).
  95. Tunneling microscope observation of a structural surface phase transition:  Structure, fluctuations, and local effects, I.-S. Hwang and J.A. Golovchenko, Phys. Rev. Lett., 71 (2), 255 -258 (12 July 1993).
  96. Metastable structural surface excitations and concerted adatom motions:  A STM study of atomic motions within a semiconductor surface, J.A. Golovchenko, I.-S. Hwang, E. Ganz, and S.K. Theiss, Mat. Res. Soc. Symp. Proc., 280, 79-86 (1993).
  97. Direct observation of a surface phase transition by hot tunneling microscopy, I.-S. Hwang and J.A. Golovchenko, Mat. Res. Soc. Symp. Proc., 280, 377‑380 (1993).
  98. Artificial atoms and kapitza potentials in classical and quantum mechanics, J.A. Golovchenko, M.M. Burns, and L.V. Hau, contributed for W. Brown Symposium, AT&T Bell Laboratories (1992).
  99. Observation of metastable structural excitations and concerted atomic motions on a crystal surface, I.S. Hwang and J.A. Golovchenko, Science 258, 1119‑1122  (1992).
  100. Neutron yields for m- irradiated PdD implications for cold fusion, A. Khabbaz, J.A. Golovchenko, R. Wilson, M. Burns, M. Chen, M. Bloomer, S.G. Steadman, D. Albagli, V. Cammarata, M. Schloh, M.S. Wrighton, K. S. Kwok, M. Gaudreau, S. Luckhardt, R. Parker, R. Debbe, D. Lowenstein, Brookhaven National Laboratory Report (1989).
  101. Surface stresses in atomic reconstructions of lead on silicon (111), K. Rao, R.E. Martinez, and J.A. Golovchenko, Surface Science, 277, 323‑329 (1992).
  102. Homoepitaxial growth of crystalline Ge films through a liquid metal medium at low temperature, F. Xiong, J.A. Golovchenko, and F. Spaepen, Mat. Res. Soc. Symp. Proc.,  204, 265‑270 (1991).
  103. Giant vibrations of impurity atoms on a crystal surface, R. E. Martinez, E.E. Fontes, J.A. Golovchenko, and J.R. Patel, Phys. Rev. Lett. 69, 1061‑1064 (1992).
  104. Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature, F. Xiong, E. Ganz, A. Loeser, J. Golovchenko, and F. Spaepen, App. Phys. Lett., 59, 3586-3588 (1991).
  105. Direct measurement of diffusion by hot tunneling microscopy:  Activation energy, anisotropy, and long jumps, E. Ganz, S. Theiss, I. Hwang, and J. Golovchenko, Phys. Rev. Lett. 68, 1567‑1570 (1992).
  106. Growth and morphology of PB on Si(111), E. Ganz, I.S. Hwang, F. Xiong, S. Leonard, and J. Golovchenko, Surface Science, 257, 259-273 (1991).
  107. Bound states of guided matter waves:  An atom and a charged wire, Lene Vestergaard Hau, Michael M. Burns, and J.A. Golovchenko, Phys. Rev. A,  45, 6468 (1992).
  108. Submonolayer phases of Pb on Si(111), E. Ganz, F. Xiong, I.S. Hwang, and J.A. Golovchenko, Phys. Rev. B, 43, 7316-7319 (1991).
  109. In Situ RBS and channeling study of molecular beam epitaxial growth of metals and semiconductors on semiconductors, F. Xiong, E. Ganz, J.A. Golovchenko, and F. Spaepen, Nuclear Instruments and Methods in Physics Research B, 56/57, 780-784 (1991).
  110. Growth and morphology of PB on Si(111) 7x7, E. Ganz, F. Xiong, I.S. Hwang, and J.A. Golovchenko, submitted as an abstract for the 18th Annual Conf. on the Physics and Chemistry of Semiconductor Interfaces, Long Beach, California, (1991).
  111. Direct observation of two reaction channels for atomic hydrogen on the Si(111) 7x7 surface, K. Mortensen, D.M. Chen, P.J. Bedrossian, J.A. Golovchenko, and F. Besenbacher, Phys. Rev. B, 43, 1816-1819 (1991).
  112. Optical matter:  Crystallization and binding in intense optical fields, M.M. Burns,  J.M. Fournier, and J.A. Golovchenko, Science, 249, 749-754 (1990).
  113. Optical binding, M. Burns, J.M. Fournier, J.A. Golovchenko, Phys. Rev. Lett., 63, 1233-1236 (1989).
  114. Adatom registry on Si(111) Ö 3x Ö 3R30 ° -B, P. Bedrossian, K. Mortensen, D.M. Chen, and J.A. Golovchenko, Phys. Rev. B, 41, 7545-7548 (1990).
  115. Direct measurement of crystal surface stress, R.E. Martinez, W.M. Augustyniak, and J.A. Golovchenko, Phys. Rev. Lett., 64, 1035-1038 (1990).
  116. Probing atomically inhomogeneous surfaces with tunneling microscopy, P. Bedrossian, K. Mortensen, D.M. Chen and J.A. Golovchenko, Nuclear Instruments and Methods in Physics Research B, 48, 296-305 (1990).
  117. Demonstration of the tunnel-diode effect on an atomic scale, P. Bedrossian, D.M. Chen, K. Mortensen, and J.A. Golovchenko, Nature, 342, 258-260 (1989).
  118. Surface doping and stabilization of Si(111) with boron, P. Bedrossian, R. Meade, K. Mortensen, D.M. Chen, J.A. Golovchenko, D. Vanderbilt, Phys. Rev. Lett., 63, 1257-1260 (1989).
  119. Arsenic and gallium atom location on silicon(111), J.R. Patel, J. Zegenhagen, P.E. Freeland, M.S. Hybertsen, J.A. Golovchenko, and D.M. Chen, Jour. of Vacuum Science & Technology B, 7, 894-900 (1989).
  120. Tunneling images of gallium on a silicon surface:  Reconstruction, superlattices and incommensuration, D. Chen, J.A. Golovchenko, P. Bedrossian, K. Mortensen, Phys. Rev. Lett., 61, 2867-2870 (1988).
  121. X-ray standing wave and tunneling microscope location of gallium atoms on a silicon surface, J. Zegenhagen, J.R. Patel, P. Freeland, D.M. Chen, J.A. Golovchenko, P. Bedrossian, and J.E. Northrup, Phys. Rev. B, 39, 1298-1301 (1989).
  122. Synchrotron x-ray standing wave study of arsenic on Si(100), J. Zegenhagen, J.R. Patel, B.M. Kincaid, J.A. Golovchenko, J.B. Mock, P.E. Freeland, R.J. Malik, and K.-G. Huang, Appl. Phys. Lett., 53, 252-254 (1988).
  123. Arsenic atom location on passivated silicon (III) surfaces, J.R. Patel, J.A. Golovchenko, P.E. Freeland, H.J. Gossman, Phys. Rev. B, 36, 7715-7717 (1987).
  124. Locations of atoms in the first monolayer of GaAs on Si, J.R. Patel, P.E. Freeland, M.S. Hybertsen, D.C. Jacobson, and J.A. Golovchenko, Phys. Rev. Lett., 59, 2180-2183 (1987).
  125. Polarization pendellsung and the generation of circularly polarized x-rays with a quarter wave plate, J.A. Golovchenko, B.M. Kincaid, R.A. Levesque, A.E. Meixner, and D.R. Kaplan, Phys. Rev. Lett., 57, 202-205 (1986).
  126. Atomic scale surface modification using a tunneling microscope, R.S. Becker, J.A. Golovchenko, and B.S. Swartzentruber, Nature, 325, 419-421 (1987).
  127. New reconstructions on silicon (III) surfaces, R.S. Becker, J.A. Golovchenko, G.S. Higashi, and B.S. Swartzentruber, Phys. Rev. Lett., 57, 1020-1023 (1986).
  128. The tunneling microscope: A new look at the atomic world, J.A. Golovchenko, Science, 232, 48-53 (1986).
  129. Normal displacements on a reconstructed silicon (III) surface: An x-ray standing wave study, J.R. Patel, R.E. Freeland, J.A. Golovchenko, A.R. Kortan, D.J. Chadi, and Guo-Xin Quian, Phys. Rev. Lett., 57, 3077-3080 (1986).
  130. Tunneling images of the 5x5 surface reconstruction on GeSi(III), R.S. Becker, J.A. Golovchenko, and B.S. Swartzentruber, Phys. Rev. B,  32, 8455-8457 (1985).
  131. Real space observation of surface states of Si(III) 7x7 with the tunneling microscope, R.S. Becker, J.A. Golovchenko, D.R. Hamann, and B.S. Swartzentruber, Phys. Rev. Lett., 55, 2032-2034 (1985).
  132. Tunneling images of atomic steps on the Si(III) 7x7 surface, R.S. Becker, J.A. Golovchenko, E.G. McRae, and B.S. Swartzentruber, Phys. Rev. Lett. 55, 2028-2031 (1985).
  133. Electron interferometry at crystal surfaces, R.S. Becker, J.A. Golovchenko, and B.S. Swartzentruber, Phys. Rev. Lett., 55, 987-990 (1985).
  134. Tunneling images of germanium reconstructions and phase boundaries, R.S. Becker, J.A. Golovchenko, and B.S. Swartzentruber, Phys. Rev. Lett., 54, 2678-2680 (1985).
  135. X-ray-standing-wave interface studies of germanium on Si(III), J.R. Patel, J.A. Golovchenko, J.C. Bean, and R.J. Morris, Phys. Rev. B, 31, 6884-6886 (1985).
  136. Low-energy electron diffraction during pulsed laser annealing: A time-resolved structural study, R.S. Becker, G.S. Higashi, and J.A. Golovchenko, Phys. Rev. Lett., 52, 307-310 (1984).
  137. The Influence of multiple scattering on channeling radiation from GeV positrons, O. Pedersen, E. Bonderup, and J.A. Golovchenko, Nuclear Instruments and Methods in Physics Research, 230 (B2), 83-89 (1984).
  138. Determination of atom locations on surfaces with x-ray standing waves, J.R. Patel and J.A. Golovchenko, Proc. of the Microscopy of Semiconducting Materials Conf., Oxford, England, 349‑347 (March 1983).
  139. X-ray standing-wave atom location in heteropolar crystals and the problem of extinction, J.R. Patel and J.A. Golovchenko, Phys. Rev. Lett., 50, 1858-1861 (1983).
  140. X-ray evanescent-wave absorption and emission, R.S. Becker, J.A. Golovchenko, and J.R. Patel, Phys. Rev. Lett., 50, 153-156 (1983).
  141. Critical analysis of the charge-state dependence of the energy-loss of channeled ions, J.A. Golovchenko, D.E. Cox, and A.N. Goland, Phys. Rev. Condensed Matter, 26, 2335-2340 (1982).
  142. Solution to the surface registration problem using x-ray standing waves, J.A. Golovchenko, J.R. Patel, D.R. Kaplan, P.L. Cowan, and M.J. Bedzyk, Phys. Rev. Lett., 49, 560-563 (1982).
  143. X-ray standing waves at crystal-surfaces, J.A. Golovchenko, Bull. Amer. Phys. Soc., 25, 426-427 (1980).
  144. X-ray standing waves at crystal-surfaces, P.L. Cowan, J.A. Golovchenko, and M.F. Robbins, Phys. Rev. Lett., 44, l680-1683 (1980).
  145. X-ray standing wave analysis for bromine chemisorbed on silicon, J.M. Bedzyk, W.N. Gibson, and J.A. Golovchenko, J. Vac. Sci. Tech., 20, 634-637 (1982).
  146. Channeling, J.A. Golovchenko, Encyclopedia of Physics, (R.G. Lerner, G.L. Trigg, eds.) (Addison Wesley, Reading, Mass.), (1981) pp. 107-109 and reprinted in Concise Encyclopedia of Solid State Physics, (R.G. Lerner, G.L. Trigg, eds.) (Addison Wesley, Reading, Mass.), 14-16 (1983).
  147. A double crystal x-ray spectrometer stabilized by a dynamic feedback system, S.K. Andersen, P.K. Bhattacharya, J.A. Golovchenko, N. Hertel, and G. Mair, J. Phys. E, 12, 1063-1066 (1979).
  148. Coherent compton effect, J.A. Golovchenko, D. Kaplan, B.M. Kincaid, R.A. Levesque, A.E. Meizner, M.F. Robbins, and J. Felsteiner, Phys. Rev. Lett., 46, 1454-1457 (1981).
  149. X-ray monochromator system for use with synchrotron radiation sources, J.A. Golovchenko, R.A. Levesque, and P.C. Cowan, Rev. Sci. Instrum., 52, 509-516 (1981).
  150. Charge state dependence of channeled ion energy loss, J.A. Golovchenko, A.N. Goland, J.S. Rosner, C.E. Thorn, H.E. Wegner, H. Knudson, and C.D. Moak, Phys. Rev. B, 23, 957-966 (1981).
  151. Etching and film formation in CF3Br plasmas: Some qualitative observations and their general implications, D.L. Flamm, P.L. Cowan, and J.A. Golovchenko, J. Vac. Sci. Tech,. 17, 1341-1347 (1980).
  152. Laser surface treatment studies in ultra-high vacuum, P.L. Cowan and J.A. Golovchenko, J. Vac. Sci. Tech., 17, 1197-1201 (1980).
  153. Dynamics of laser-annealing, D.H. Auston, J.A. Golovchenko, and T.N.C. Venkatesan, Proc. at Society of Photo-Optical Instrumentation Engineers, (1979).
  154. Calculation of the dynamics of surface melting during laser annealing, C.M. Surko, A.L. Simons, D.H. Auston, J.A. Golovchenko, R.E. Slusher, and T.N.C. Venkatesan, Appl. Phys. Lett., 34 (10), 635-637 (15 May 1979).
  155. Dual-wavelength laser annealing, D.H. Auston, J.A. Golovchenko, and T.N.C. Venkatesan, Appl. Phys. Lett., 34 (9), 558-560 (1 May 1979).
  156. Study of surface crystallinity and stoichiometry of laser-annealed GaAs using time resolved reflectivity and channeling, T.N.C. Venkatesan, D.H. Auston, J.A. Golovchenko, and C.M. Surko, in Laser-Solid Interactions and  Laser Processing - ed. S. D. Ferris, 629-633 (1978).
  157. Dynamics of laser annealing, D.H. Auston, J.A. Golovchenko et al., in Laser-Solid Interactions and  Laser Processing - ed. S. D. Ferris, 11-26 (1978) .
  158. A capacitance based micropositioning system for x-ray rocking curve measurements, G.L. Miller, R.A. Boie, P.L. Cowan, J.A. Golovchenko, R.W. Kerr, and D.A.H. Robinson, Rev. Sci. Instrum., 50 (9), 1062-1069 (1979).
  159. Study of surface crystallinity and stoichiometry of laser-annealed GaAs using time-resolved reflectivity and channeling, T.N.C. Venkatesan, D.H. Auston, J.A. Golovchenko, and C.M. Surko, Appl. Phys. Lett., 35 (1), 88-90 (1 July 1979).
  160. Melting phenomenon during pulsed laser annealing in silicon, P.M. Petroff, D.H. Auston, J.R. Patel, P.R. Smith, A. Savage, J.A. Golovchenko, J. Electr. Mat., 8, 729 (1979).
  161. Dynamics of Q- switched laser annealing, D.H. Auston, J.A. Golovchenko, A.L. Simons, C.M. Surko, and T.N.C. Venkatesan, Appl. Phys. Lett., 34, 777-779 (1979).
  162. C.W. Argon laser annealing of ion implanted silicon, D.H. Auston, J.A. Golovchenko, P.R. Smith, C.M. Surko, and T.N.C. Venkatesan, Appl. Phys. Lett., 34 (11), 777-779 (1 June 1979).
  163. Nuclear interactions for 15 GeV/c protons and pions under random and channeling conditions in germanium single crystals, S.K. Andersen, H. Esbensen, O. Fich, J.A. Golovchenko, H. Nielsen, H.E. Schiøtt, E. Uggerhøj, C. Vrast-Thomsen, G. Charpak, G. Petersen, F. Sauli, J.P. Ponpon, and R. Siffert, Nucl. Phys. B, B144, 1-21 (1978).
  164. Time-resolved reflectivity of ion-implanted silicon during laser annealing, D.H. Auston, C.M. Surko, T.N.C. Venkatesan, R.E. Slusher, and J.A. Golovchenko, Appl. Phys. Lett., 33 (5), 437-439 (1 September 1978).
  165. Dose dependence in the laser annealing of arsenic implanted silicon, T.N.C. Venkatesan, J.A. Golovchenko, J.M. Poate, P.L. Cowan, and G.K. Celler, Appl. Phys. Lett., 353, 429-431 (1978).
  166. An analysis of the transverse momentum distribution for axially channeled protons, J.S. Rosner, A.N. Goland, H.E. Wegner, J.A. Golovchenko, W.M. Gibson, Bull. Amer. Phys. Soc., 23, 392 (1978).
  167. Random and channeled energy loss in thin germanium and silicon crystals for positive and negative 2-15 GeV/c pions, kaons and protons, H. Esbensen, O. Fich, J.A. Golovchenko, S. Madsen, H. Nielsen, H.E. Schiøtt, E. Uggerhøj, C. Vraast-Thomsen, G. Charpak, S. Majewski, G. Odyniec, G. Petersen, F. Sauli, J.P. Ponpon, and P. Siffert, Phys. Rev. B, 18 (3), 1039-1054 (1 August 1978).
  168. A quantitative study of the transmission of axially channeled protons in thin silicon crystals, J.S. Rosner, W.M. Gibson, J.A. Golovchenko, A.N. Goland, and H.E. Wegner, Phys. Rev . B, 18 (3), 1066-1075 (1 August 1978).
  169. Laser annealing of ion implanted semiconductors, Brown, Celler, J.A. Golovchenko, et al., in Rapid Solidification Processing:  Principles and Technologies, 123-128 (Claitors Pub. Div., Baton Rouge, 1977.
  170. Energy loss of fast channeled particles, H. Esbensen and J.A. Golovchenko, Nuclear Physics, A298, 382-396 (March 1978).
  171. Annealing of Te-implanted GaAs by ruby laser irradiation, J.A. Golovchenko and T.N.C. Venkatesan, Appl. Phys. Lett., 32 (3), 147-149 (1 February 1978).
  172. Channeling effects for 15 GeV/c negative pions, H. Esbensen, O. Fich, J.A. Golovchenko, S. Madsen, K.O. Nielsen, H.E. Schiøtt, E. Uggerhøj, C. Vråst-Thomsen, G. Charpak, S. Majewski, G. Odyniec, G. Petersen, F. Sauli, J.P. Ponpon, and P. Siffert, Phys. Rev. Lett., 72B (3), 408-410 (2 January 1978).
  173. Channeling of protons, pions, and deuterons in the GeV region, H. Esbensen, O. Fich, J.A. Golovchenko, K.O. Nielsen, H.E. Schiott, E. Uggerhøj, C. Vråst-Thomsen, G. Charpak, S. Majewski, F. Sauli, and J.P. Ponpon, Nuclear Phys., B127, 281-313 (24 February 1977).
  174. Positron-annihilation momentum profiles in aluminum: Core contribution and the independent-particle model, K. G. Lynn, J. R. MacDonald, R.A. Boie, L.C. Feldman, J. D. Gabbe, M.F. Robbins, E. Bonderup, and J.A. Golovchenko, Phys. Rev. Lett., 38, 241-244 (31 January 1977).
  175. Investigation of axial channeled particles near the critical angle in thin silicon crystals, J.S. Rosner, W.M. Gibson, A.N. Goland, H.E. Wegner, J.A. Golovchenko, Bull. Amer. Phys. Soc., 21, 660-661 (1976).
  176. Channeling of 1.1 GeV/c protons and pions, O. Fich, J.A. Golovchenko, K.O. Nielsen, E. Uggerhøj, G. Charpak, and F. Sauli, Phys. Rev. Lett., 57B (1), 90-92 (9 June 1975).
  177. Ionization loss of channeled 1.35-GeV/c protons and pions, O. Fich, J.A. Golovchenko, K.O. Nielsen, E. Uggerhøj, C. Vråst-Thomsen, G. Charpak, S. Majewski, F. Sauli, and J.P. Ponpon, Phys. Rev. Lett., 36, (21), 1245-1248 (24 May 1976).
  178. New applications of x-ray standing waves in solid state physics, S.K. Andersen, J.A. Golovchenko and G. Mair, Phys. Rev. Lett., 37, 1141-1145 (25 October 1976).
  179. Energy loss of fast channeled particles, J.A. Golovchenko and H. Esbensen, Nucl. Inst. Meth., 132, 137 (1976).
  180. The energy loss of fast channeled particles, J.A. Golovchenko, Bull. Am. Phys. Soc. Series II, 19, 355 (1974).
  181. Channeling in very thin crystals, J.A. Golovchenko, Proc. of the Intl. Diamonds Conf., (July 1972).
  182. The stopping of fast charges particles, J.A. Golovchenko, (BNL 20261 Internal Report).
  183. A few analytical solutions to the linear boltzmann transport equation with an application to channeling, J.A. Golovchenko, Phys. Rev. B, 13, 11 4672-4677 (1 June 1976).
  184. The observation of internal x-ray wave fields during Bragg diffraction with an application to impurity lattice location, J.A. Golovchenko, B.W. Batterman, and W.L. Brown, Phys. Rev., B 10, 4239-4243 (1974).
  185. Direct comparison of Mossbauer and channeling studies of implanted 119 Sn in silicon single crystals, G. Weyer, J.U. Andersen, E. Deutsch, J.A. Golovchenko and A.N. Larsen, Rad. Eff. 24, ll7-121 (1975).
  186. Correlated scattering of protons impinging as hydrogen molecules, J.A. Golovchenko and E. Laegsgaard, Phys. Rev., A 9 (3), 1215-1219 ( March 1974).
  187. A qualitative description of the transverse motion of axial channeled particles, D.D. Armstrong, W.M. Gibson, A. Goland, J.A. Golovchenko, R.A. Levesque, R.L. Meek, and H.E. Wegner, Rad. Eff., 12, 143-147 (1972).
  188. Deduction of continuum potentials from planar channeling, W.M. Gibson, J.A. Golovchenko, Phys. Rev. Lett. 28, 1301-1304 (15 May 1972).